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| Fast Recovery Epitaxial Diode (FRED) DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns VRSM V 1000 VRRM V 1000 Type DSEI 2x 61-10P D5 Symbol IFRMS IFAVM IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 25C VR = 0.8 * VRRM TVJ = 125C VR = 0.8 * VRRM IF = 60 A; TVJ = 150C TVJ = 25C TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque (M4) t = 1 min t=1s Conditions Maximum Ratings (per diode) 100 60 800 500 -40...+150 150 -40...+150 180 2500 3000 1.5 - 2.0 14 - 18 18 A A A A C C C W V~ V~ Nm lb.in. g Features * * * * * * 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour TVJ = TVJM TC = 50C; rectangular; d = 0.5 tP < 10 s; rep. rating; pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine Applications * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Low noise switching * Small and light weight Characteristic Values (per diode) typ. max. 3 0.5 14 1.8 2.3 1.65 8.3 0.7 0.05 mA mA mA V V V m K/W K/W 50 36 min. 11.2 min. 11.2 max. 50 ns A mm mm m/s VF VT0 rT RthJC RthCK trr IRM dS dA a For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 200 A/s VR = 30 V; TVJ = 25C VR = 540 V; IF = 60 A; -diF/dt = 480 A/s L 0.05 H; TVJ = 100C Creeping distance on surface Creeping distance in air Allowable acceleration 35 32 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 139 (c) 2001 IXYS All rights reserved 1-2 DSEI 2x 61-10P D5 Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Dimensions Fig. 7 Transient thermal impedance junction to case. (c) 2001 IXYS All rights reserved 2-2 |
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